PLASMA ION-IMPLANTATION HYDROGENATION OF POLY-SI CMOS THIN-FILM TRANSISTORS AT LOW-ENERGY AND HIGH-DOSE-RATE USING AN INDUCTIVELY-COUPLED PLASMA SOURCE

Defect passivation in polycrystalline silicon (poly-Si) CMOS thin-film transistors (TFT's) has been performed by plasma ion implantation (PI I) hydrogenation process. Implantation at low energy (2 keV) and high dose rate (similar to 10(16)/cm(2) s) was achieved by an inductively-c oupled plasma source. The device parameter improvements are saturated in 3-4 min, which is much shorter than other hydrogenation methods rep orted in the literature. The stress measurements indicate that the dev ices hydrogenated by this new technique have much better long-term rel iability than that hydrogenated by other techniques.