C. Ciofi et al., CHARACTERIZATION OF AL-SI-CU METAL LINES BY MEANS OF TEM ANALYSIS ANDTHE SARF TECHNIQUE, Microelectronics and reliability, 37(7), 1997, pp. 1079-1085
Four groups of samples deposited at different temperatures, T-D, have
been characterized by means of the SARF (Spectral Analysis of Resistan
ce Fluctuations) technique. For each temperature, lines with the same
length (800 mu m) and two different widths (1 mu m and 2 mu m) were av
ailable. An accurate TEM (Transmission Electron Microscopy) analysis h
as been carried out with the aim of investigating the dependence of th
e microstructure on T-D. While 1-mu m-wide lines showed a quasi-bamboo
structure, regardless of T-D, 2-mu m-wide lines appeared constituted
by grains whose size was smaller than the stripe width. In this case,
the grain size distribution was dependent on T-D. A new microstructura
l parameter has been introduced to which electromigration noise seems
to be very sensitive: the percentage of grains of the metal film whose
size is smaller than the stripe width. The correlation observed among
noise parameters, microstructural characteristics of the lines and, i
n the case in which they were available, lifetime data, has confirmed
the potentiality of the SARF technique as a diagnostic tool. (C) 1997
Elsevier Science Ltd.