A METHOD FOR SEPARATING THE EFFECTS OF INTERFACE FROM BORDER AND OXIDE TRAPPED CHARGE-DENSITIES IN MOS-TRANSISTORS

This paper presents a procedure for a more accurate separation of inte rface trap effects in the presence of large border trap densities afte r irradiation of MOS devices. It is based on the standard subthreshold technique, but a special measurement procedure is applied which elimi nates the drifts produced by border traps via the tunneling effect. Th e procedure is demonstrated on pMOS dosimetric transistors, and it is shown that it gives different and, we claim, better estimates of inter face trap density than standard techniques. (C) 1997 Elsevier Science Ltd.