LOW-TEMPERATURE PLANAR REGROWTH OF SEMIINSULATING INP BY LOW-PRESSUREHYDRIDE VAPOR-PHASE EPITAXY FOR DEVICE APPLICATION

The growth of both undoped and iron doped InP on planar as well as non -planar (0 0 1)InP substrates has been explored using low pressure hyd ride vapour phase epitaxy (LP-HVPE) in the temperature range of 500-62 0 degrees C. Secondary ion mass spectroscopy (SIMS), X-ray diffraction and photoluminescence measurements have shown no drastic degradation in the crystal quality with decreasing growth temperature. The Fe inco rporation in the layers is found to be independent of the substrate te mperature (T-s) and in all experiments semi-insulating InP:Fe layers w ith resistivities close to 10(9) Ohm cm have been obtained. A perfect growth selectivity with no deposition on masked areas and a good plana rized regrowth on mesas has been demonstrated even at low T-s. (C) 199 8 Elsevier Science B.V. All rights reserved.