ANALYSIS OF GALLIUM NITRIDE GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

For analysis of GaN growth by molecular beam epitaxy using atomic gall ium and molecular ammonia sources a quasi-thermodynamic model accounti ng for kinetics of molecular nitrogen evaporation is applied. Growth r ate and vapor-phase composition (partial pressures of desorbed species ) as a function of temperature and incident gallium and ammonia fluxes are calculated The theoretical results are compared to the available experimental data. (C) 1998 Elsevier Science B.V. All rights reserved.