DEFECTS AND GROWTH MECHANISMS OF AGCL(100) TABULAR CRYSTALS

Citation
W. Vanrenterghem et al., DEFECTS AND GROWTH MECHANISMS OF AGCL(100) TABULAR CRYSTALS, Journal of crystal growth, 187(3-4), 1998, pp. 410-420
Citations number
20
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
187
Issue
3-4
Year of publication
1998
Pages
410 - 420
Database
ISI
SICI code
0022-0248(1998)187:3-4<410:DAGMOA>2.0.ZU;2-F
Abstract
AgCl(I) crystals with (1 0 0) surfaces are studied with conventional t ransmission electron microscopy for their microstructure in relation w ith their growth habits. The crystals are prepared according to two di fferent growth methods which give slightly different results. The pres ence of dislocations of mixed character that end at only two surfaces are in both cases responsible for the tabular growth, but the formatio n of these dislocations is different. In the first case, a stacking fa ult is formed which is eliminated by dislocations. In the second case, the incorporation of iodide impurities is at the origin of the format ion of dislocations. (C) 1998 Elsevier Science B.V. All rights reserve d.