EPITAXIAL-GROWTH OF BODY-CENTERED-CUBIC COXMN1-X ON GAAS(001)

Authors
DONG GS WU YZ JING C CHEN Y ZHU WR JIN XF ZHAO HW LU M ZHAI HR SHEN XL LI L
Citation
Gs. Dong et al., EPITAXIAL-GROWTH OF BODY-CENTERED-CUBIC COXMN1-X ON GAAS(001), Journal of crystal growth, 187(3-4), 1998, pp. 444-448
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
187
Issue
3-4
Year of publication
1998
Pages
444 - 448
Database
ISI
SICI code
0022-0248(1998)187:3-4<444:EOBCOG>2.0.ZU;2-D
Abstract
The growth of single-crystal CoxMn1-x alloy on GaAs(0 0 1) has been ac hieved at room temperature using molecular beam epitaxy. The body-cent ered-cubic structure is determined by in situ reflection high energy e lectron diffraction (RHEED). In-plane magnetic anisotropy has been det ermined using the longitudinal magneto-optical Kerr effect technique. (C) 1998 Elsevier Science B.V. All rights reserved.