FORMATION OF 2-DIMENSIONAL ARSENIC PRECIPITATION IN SUPERLATTICE STRUCTURES OF ALTERNATELY UNDOPED AND HEAVILY BE-DOPED GAAS WITH VARYING PERIODS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

As precipitates in superlattice structures of alternately undoped and [Be] = 2.4 x 10(20) cm(-3) doped GaAs with varying periods grown by mo lecular beam epitaxy at low substrate temperatures were studied by tra nsmission electron microscopy. Never arsenic precipitate microstructur es were observed in annealed samples, including preferential accumulat ion of precipitates inside the Be-doped GaAs but near each interface o f Be-doped GaAs and the following grown undoped GaAs. The confinement reaches the extreme for samples annealed at 800 degrees C, where the p recipitates appear as dot arrays along such interfaces and leave other areas almost free of precipitates. The incorporation of substitutiona l Be accepters is believed to cause a smaller lattice constant in the heavily Be-doped regions than in the undoped regions. A strain-induced mechanism was proposed to account for the preferential segregation of As clusters, though the underlying mechanism is not fully clear. (C) 1998 Elsevier Science B.V. All rights reserved.