GROWTH OF CRYSTALLINE LIF ON CF4 PLASMA-ETCHED LINBO3 SUBSTRATES

Citation
H. Nagata et al., GROWTH OF CRYSTALLINE LIF ON CF4 PLASMA-ETCHED LINBO3 SUBSTRATES, Journal of crystal growth, 187(3-4), 1998, pp. 573-576
Citations number
7
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
187
Issue
3-4
Year of publication
1998
Pages
573 - 576
Database
ISI
SICI code
0022-0248(1998)187:3-4<573:GOCLOC>2.0.ZU;2-N
Abstract
The LiNbO3, (LN) substrates were etched by electron cyclotron resonanc e (ECR) plasma of CF4 gas and analyzed by a surface sensitive method. After the etching process, crystalline LiF particles were found on the surface. These LiF particles were removed from the surface by an HNO3 , rinse or a heat treatment in an O-2 atmosphere and a LiNb3O8 phase a ppeared. The surface morphology was rough in spite of the removal of t he LIF layer. Such chemical deterioration of the LN surface due to the CF4 ECR plasma etching treatment is not desirable for LN optoelectron ic devices. (C) 1998 Elsevier Science B.V. All rights reserved.