IDENTIFICATION OF STRESS-INDUCED LEAKAGE CURRENT COMPONENTS AND THE CORRESPONDING TRAP MODELS IN SIO2-FILMS

Time decay stress-induced leakage current (SILC) has been systematical ly investigated for the cases of both Fowler-Nordheim (FN) stress and substrate hot-hole stress, From the three viewpoints of the reproducib ility of the current component for the gate voltage scan, the change o f oxide charge during the gate voltage scan, and the resistance of the current component to thermal annealing, it has been found that tine-d ecay stress-induced leakage current is composed of five current compon ents, regardless of stress type. Trap models corresponding to each cur rent component have been proposed, In addition, it has also been prove n that holes generate the electron traps related to one of those curre nt components.