SIC DEVICE EDGE TERMINATION USING FINITE AREA ARGON IMPLANTATION

Authors
ALOK D BALIGA BJ
Citation
D. Alok et Bj. Baliga, SIC DEVICE EDGE TERMINATION USING FINITE AREA ARGON IMPLANTATION, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 1013-1017
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
6
Year of publication
1997
Pages
1013 - 1017
Database
ISI
SICI code
0018-9383(1997)44:6<1013:SDETUF>2.0.ZU;2-I
Abstract
In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier di odes are reported, It is demonstrated that only 50 mu m of implant reg ion is required at the periphery to obtain ideal plane parallel breakd own voltages, The leakage current at small reverse bias voltages was f ound to be directly proportional to the implant area.