REDUCTION OF LEAKAGE CURRENT IN CHEMICAL-VAPOR-DEPOSITED TA2O5 THIN-FILMS BY FURNACE N2O ANNEALING

Authors
SUN SC CHEN TF
Citation
Sc. Sun et Tf. Chen, REDUCTION OF LEAKAGE CURRENT IN CHEMICAL-VAPOR-DEPOSITED TA2O5 THIN-FILMS BY FURNACE N2O ANNEALING, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 1027-1029
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
6
Year of publication
1997
Pages
1027 - 1029
Database
ISI
SICI code
0018-9383(1997)44:6<1027:ROLCIC>2.0.ZU;2-7
Abstract
In this brief, we present a post-deposition annealing technique that e mploys furnace annealing in N2O (FN2O) to reduce the leakage current o f chemical-vapor-deposited tantalum penta-oxide (CVD Ta2O5) thin films , Compared with furnace annealing in O-2 (FO) and rapid thermal anneal ing in N2O (RTN2O), FN2O annealing proved to have the lowest leakage c urrent and the most reliable time-dependent dielectric breakdown (TDDB ).