IMPROVED HETEROEPITAXIAL GROWTH OF LAYERED NBSE2 ON GAAS (111)B

Authors
YAMAMOTO H YOSHII K SAIKI K KOMA A
Citation
H. Yamamoto et al., IMPROVED HETEROEPITAXIAL GROWTH OF LAYERED NBSE2 ON GAAS (111)B, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 125-129
Citations number
12
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
1
Year of publication
1994
Pages
125 - 129
Database
ISI
SICI code
0734-2101(1994)12:1<125:IHGOLN>2.0.ZU;2-3
Abstract
Growth of layered NbSe2 has been carried out on a GaAs (111)B surface by molecular beam epitaxy (MBE). The optimum growth conditions to obta in high quality films were investigated by use of reflection high ener gy electron diffraction. Single crystalline films as thick as 100 nm w ere obtained when suitable surface treatment of the GaAs substrate was made with the interruption of the Nb beam or the use of a cracked Se beam. The factors determining the MBE growth of layered NbSe2 are also discussed.