Dh. Kim et al., SELECTIVE DEPOSITION OF COPPER BY CHEMICAL-VAPOR-DEPOSITION USING CU(HFA)(2), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 153-157
Citations number
9
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The selectivity of chemical vapor deposition copper for metal or metal
lic substrates in preference to silicon dioxide was investigated syste
matically using copper (II) hexafluoroacetylacetonate, Cu(HFA)(2), wit
h pure hydrogen or hydrogen/argon mixtures (1:3) in a cold wall type v
ertical flow reactor as a function of measured total pressure (2-10 To
n), deposition temperature (310-390 degrees C), and inlet precursor mo
le fraction (0.008-0.09). The deposition temperature was found to be t
he most important parameter. Temperatures of 310-360 degrees C resulte
d in selective deposition under the above conditions. Auger electron s
pectroscopy depth profiles indicate the composition of the films. Some
local nucleation of copper due to the surface imperfections on silico
n oxide was observed. These studies help to clarify some discordant re
sults reported in the literature by determining to a good approximatio
n the conditions of temperature, pressure and gas phase composition un
der which selective deposition of copper was observed.