Fundamental physics of strained layer GeSi: Quo vadis?

Authors
Shaw, MJ Jaros, M
Citation
Mj. Shaw et M. Jaros, Fundamental physics of strained layer GeSi: Quo vadis?, SEM SEMIMET, 56, 1999, pp. 169-223
Citations number
66
Categorie Soggetti
Current Book Contents
Journal title
GERMANIUM SILICON: PHYSICS AND MATERIALS → ACNP
ISSN journal
00808784
Volume
56
Year of publication
1999
Pages
169 - 223
Database
ISI
SICI code
0080-8784(1999)56:<169:FPOSLG>2.0.ZU;2-X