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Results:
1-8
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Results: 8
Authors:
Bean, JC
Citation: Jc. Bean, Growth techniques and procedures, SEM SEMIMET, 56, 1999, pp. 1-48
Authors:
Savage, DE
Liu, F
Zielasek, V
Lagally, MG
Citation: De. Savage et al., Fundamental mechanisms of film growth, SEM SEMIMET, 56, 1999, pp. 49-100
Authors:
Hull, R
Citation: R. Hull, Misfit strain and accommodation in SiGe heterostructures, SEM SEMIMET, 56, 1999, pp. 101-167
Authors:
Shaw, MJ
Jaros, M
Citation: Mj. Shaw et M. Jaros, Fundamental physics of strained layer GeSi: Quo vadis?, SEM SEMIMET, 56, 1999, pp. 169-223
Authors:
Cerdeira, F
Citation: F. Cerdeira, Optical properties, SEM SEMIMET, 56, 1999, pp. 225-292
Authors:
Ringel, SA
Grillot, PN
Citation: Sa. Ringel et Pn. Grillot, Electronic properties and deep levels in germanium-silicon, SEM SEMIMET, 56, 1999, pp. 293-346
Authors:
Campbell, JC
Citation: Jc. Campbell, Optoelectronics in silicon and germanium silicon, SEM SEMIMET, 56, 1999, pp. 347-386
Authors:
Eberl, K
Brunner, K
Schmidt, OG
Citation: K. Eberl et al., Si1-yCy and Si1-x-yGexCy alloy layers, SEM SEMIMET, 56, 1999, pp. 387-422
Risultati:
1-8
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