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Results: 1-8 |

Table of contents of journal:

Results: 8

Authors: Bean, JC
Citation: Jc. Bean, Growth techniques and procedures, SEM SEMIMET, 56, 1999, pp. 1-48

Authors: Savage, DE Liu, F Zielasek, V Lagally, MG
Citation: De. Savage et al., Fundamental mechanisms of film growth, SEM SEMIMET, 56, 1999, pp. 49-100

Authors: Hull, R
Citation: R. Hull, Misfit strain and accommodation in SiGe heterostructures, SEM SEMIMET, 56, 1999, pp. 101-167

Authors: Shaw, MJ Jaros, M
Citation: Mj. Shaw et M. Jaros, Fundamental physics of strained layer GeSi: Quo vadis?, SEM SEMIMET, 56, 1999, pp. 169-223

Authors: Cerdeira, F
Citation: F. Cerdeira, Optical properties, SEM SEMIMET, 56, 1999, pp. 225-292

Authors: Ringel, SA Grillot, PN
Citation: Sa. Ringel et Pn. Grillot, Electronic properties and deep levels in germanium-silicon, SEM SEMIMET, 56, 1999, pp. 293-346

Authors: Campbell, JC
Citation: Jc. Campbell, Optoelectronics in silicon and germanium silicon, SEM SEMIMET, 56, 1999, pp. 347-386

Authors: Eberl, K Brunner, K Schmidt, OG
Citation: K. Eberl et al., Si1-yCy and Si1-x-yGexCy alloy layers, SEM SEMIMET, 56, 1999, pp. 387-422
Risultati: 1-8 |