ANALYTICAL SURFACE-POTENTIAL EXPRESSION FOR THIN-FILM DOUBLE-GATE SOIMOSFETS

Using a perturbation theory, we derived an analytical surface potentia l expression for subthreshold and strong-inversion regions. This enabl ed us to derive analytical models for the subthreshold slope, threshol d voltage, and induced electron concentration of It double-gate SOI MO SFET. We also clarified the dependence of the device characteristics o n device parameters, and explained the ideal subthreshold factor. We d o not expect volume inversion in practical devices. Our models' predic tions agree well with numerical and experimental data.