THRESHOLD VOLTAGE SHIFT IN DEPLETION MODE INSULATED GATE FIELD-EFFECTTRANSISTORS

Authors
HALDAR S KHANNA MK",MANEESHA,"SOOD R",MANJU,"AGGARWAL V GUPTA RS
Citation
S. Haldar et al., THRESHOLD VOLTAGE SHIFT IN DEPLETION MODE INSULATED GATE FIELD-EFFECTTRANSISTORS, Solid-state electronics, 37(2), 1994, pp. 377-379
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
2
Year of publication
1994
Pages
377 - 379
Database
ISI
SICI code
0038-1101(1994)37:2<377:TVSIDM>2.0.ZU;2-M