PREPARATION AND CHARACTERIZATION OF CDTE ZNSEXCDS1-X HETEROJUNCTIONS/

Thin films of CdTe and CdTe:Sb have been, grown on glass substrates by vacuum evaporation. Doping increases the conductivity of CdTe films b y four orders of magnitude. The optical bandgap and structure were als o determined. Heterojunctions of CdTe/ZnSexCdS1-x were prepared and ch aracterized by dark J-V, C-V and photovoltaic studies. The temperature dependence of the dark characteristics confirmed the dominance of a t unneling mechanism in these heterojunctions. The open circuit voltages obtained for CdTe/ZnSexCdS1-x were in the range 0.56-0.63 V. The shor t circuit current densities were in the range 10.2-11.9 mA cm(-2) and efficiencies varied in the range 3.08%-4.00%. (C) 1998 Elsevier Scienc e S.A. ALI rights reserved.