PREPARATION AND CHARACTERIZATION OF ELECTRODEPOSITED BI2SE3 THIN-FILMS

Citation
Ap. Torane et al., PREPARATION AND CHARACTERIZATION OF ELECTRODEPOSITED BI2SE3 THIN-FILMS, Materials chemistry and physics, 55(1), 1998, pp. 51-54
Citations number
23
Categorie Soggetti
Material Science
ISSN journal
02540584
Volume
55
Issue
1
Year of publication
1998
Pages
51 - 54
Database
ISI
SICI code
0254-0584(1998)55:1<51:PACOEB>2.0.ZU;2-V
Abstract
Thin films of Bi2Se3 have been prepared from an aqueous acidic bath at room temperature using selenium dioxide as a selenium ion source by a simple, inexpensive electrodeposition technique. The electrodepositio n potentials for different bath compositions and concentrations are es timated from polarization curves. It has been found that Bi(NO3)(3) an d SeO2 in the volumetric proportion as 7:3 and their equimolar solutio ns of 0.025 M form good quality films. The films are annealed in a nit rogen atmosphere at 200 degrees C for 2 h. The films are characterized by scanning electron microscopy, X-ray diffraction and optical absorp tion techniques. Studies reveal that as-deposited and annealed thin fi lms are continuous and polycrystalline in nature. The optical band gap has been found to be 0.55 eV for the above-mentioned composition and concentration of the film. (C) 1998 Elsevier Science S.A. All rights r eserved.