W. Zhou et al., A MULTI-EMITTER FINGER ALGAAS GAAS HBT MODEL INCLUDING THE EFFECTS OF2-DIMENSIONAL TEMPERATURE DISTRIBUTION ON EMITTER FINGERS/, Solid-state electronics, 42(5), 1998, pp. 693-698
Two-dimensional temperature distribution on the emitter fingers of mul
ti-finger AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is stu
died, and a model including such effects was developed to describe the
HBT behavior and performance, such as the d.c. current gain and cutof
f frequency. Device design issues such as the number of fingers, finge
r spacing, and finger dimension were considered. Results obtained from
measurements and simulated from a three-dimensional device simulator
are included in support of the model. Further, the present model is co
mpared against the conventional model to assess the degree of inaccura
cy caused by the use of one-dimensional temperature profile in HBT mod
eling. (C) 1998 Elsevier Science Ltd.