ORIGIN OF SERIES RESISTANCES IN A-SI-H TFTS

The origin of source/drain series resistances in amorphous silicon (a: Si:H) thin-film transistors (TFT) is analyzed based on a two-dimension al simulation of a-Si:H TFT and gated-four-probe (GFP) a-Si:H TFT stru ctures. The source/drain series resistances consist of the contact res istances between source/drain electrodes and n(+) a-Si:H film, n(+) a- Si:H film resistances, intrinsic a-Si:H bulk resistances, and the geom etrical resistances associated with the source/drain-gate overlaps. Th e influence of each component of series resistances on a-Si:H TFT elec trical performance is clearly described based on the results of two-di mensional simulation. Published by Elsevier Science Ltd.