Gp. Lopinski et al., MULTIPLE BONDING GEOMETRIES AND BINDING STATE CONVERSION OF BENZENE SI(100)/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1037-1042
Citations number
27
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Scanning tunneling microscopy (STM), Fourier-transform infrared spectr
oscopy and semiempirical quantum cluster calculations have been used t
o investigate the chemisorption of benzene on the Si(100)(2X1) surface
. Room temperature adsorption results in the occupation of multiple bo
nding configurations including on-top of a single Si dimer and two dif
ferent bridging geometries involving interaction with two Si dimers. W
hile the single dimer state is populated preferentially upon adsorptio
n, it is observed to be metastable with respect to the bridging config
uration. The single dimer to bridge conversion is activated, with a ba
rrier of 0.94 eV. The single dimer geometry can be repopulated via a p
rocess assisted by the STM tip. (C) 1998 American Vacuum Society.