SURFACE SEGREGATION OF LOW-ENERGY ION-INDUCED DEFECTS IN SI

Surfaces of Si(100) irradiated at 110 K with 5 keV He ions under ultra high vacuum conditions and subsequently annealed isochronally display abrupt healing of the radiation-induced surface roughness at 160 K. Sm oothening also occurs at 160 K for Si(100)-2 x 1 irradiated with 230 e V Ar ions at 110 K, but not for Si(100) following submonolayer Si depo sition at 110 K. The data suggest that the smoothening at 160 K follow ing 5 keV He ion irradiation at 110 K results from surface recombinati on of point defects which are generated on or below the surface by the irradiation and migrate to the surface at 110 K. (C) 1998 American Va cuum Society. [S0734-2101(98)06303-9].