PHOTOELECTRON MICROSPECTROSCOPY OBSERVATIONS OF A CLEAVED SURFACE OF SEMICONDUCTOR DOUBLE-HETEROSTRUCTURE

We have developed a submicron-area high energy resolution photoelectro n spectroscopy system equipped with a multilayer-coated Schwarzschild objective for forming a soft x-ray microbeam. We show the photoelectro n microspectroscopy results of the cross section of a semiconductor do uble heterostructure sample, namely an epitaxial film [InP (50 nm thic k)/In0.53Ga0.47As (2.3 mu m thick)/InP (100) substrate] grown by metal organic chemical vapor deposition. The core-level photoelectron spectr a were obtained from the cross section of the cleaved sample. The As 3 d, Ga 3d, and In 4d peaks were observed in the In0.53Ga0.47As region. In the InP region, the As 3d and Ga 3d peaks were not observed, and on ly the In 4d peak was. This result corresponds to the structure observ ed by cross-sectional scanning electron microscopy. Moreover, we obser ved an irradiation effect that was caused by the microbeam. These resu lts suggest that this photoelectron microspectroscopy system is a powe rful tool for studying chemical and electronic states of submicron-are a surfaces. (C) 1998 American Vacuum Society.