PROPERTIES OF ZNO-IN FILM PREPARED BY SPUTTERING OF FACING ZNO-IN ANDZN TARGETS

ZnO:In films were prepared by a sputtering method with targets facing. The lowest resistivity film is obtained at a substrate temperature of 150 degrees C using a ZnO target doped with 3 wt % In2O3. At substrat e temperatures above 300 degrees C the resistivity of the film increas es as the carrier concentration decreases. This implies a significant decrease in the donor impurity, ascribed to evaporation of the indium during film growth. From experiments with an additional Zn supply duri ng deposition, we found that all of the doped indium is ionized as don or in ZnO:In, and that evaporation of depositing indium atoms is enhan ced above 250 degrees C. (C) 1998 American Vacuum Society. [S0734-2101 (98)05603-6].