MICROSTRUCTURE-DEPENDENT FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS FABRICATED BY RADIO-FREQUENCY MAGNETRON SPUTTERING

Microstructure dependencies on the ferroelectric properties of SrBi2Ta 2O9 (SBT) thin films were observed by changing the sputtering pressure in the rf magnetron sputtering technique. The microstructure and the crystal orientations were determined by the compositional change of th e films, which was controlled by the scattering behaviors during sputt er depositions. The good ferroelectric hysteresis loop behavior was du e to the stoichiometric composition and the layered perovskite structu re of the SET thin films. On the other hand, nonstoichiometric SET fil ms had small grains of pyrochlore structure and linear dielectric beha vior. (C) 1998 American Vacuum Society.