QUANTUM-WELL STATES IN HIGH-QUALITY CU FILMS DEPOSITED ON CO(100) - AHIGH-RESOLUTION PHOTOEMISSION-STUDY

Citation
P. Segovia et al., QUANTUM-WELL STATES IN HIGH-QUALITY CU FILMS DEPOSITED ON CO(100) - AHIGH-RESOLUTION PHOTOEMISSION-STUDY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1368-1373
Citations number
13
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
16
Issue
3
Year of publication
1998
Part
1
Pages
1368 - 1373
Database
ISI
SICI code
0734-2101(1998)16:3<1368:QSIHCF>2.0.ZU;2-P
Abstract
Quantum well (QW) states of thin Cu films deposited on Co (100) are st udied using high resolution photoemission. In order to obtain a smooth Co-Cu interface, Cu films were prepared by evaporating the interfacia l layer at 100 K. This allows us to obtain better defined QW features at the valence band. Furthermore, following this preparation method we are able to observe for the first time QW states at the neck of the C u Fermi surface, which are not observable when the interfacial layer i s deposited at 300 K. Using these high-quality films we also study; fi nal-state-related oscillations in the intensity of the photoemission s pectra as well as the lifetime broadening of the QW states. (C) 1998 A merican Vacuum Society. [S0734-2101(98)04203-1].