Kk. Shih et Db. Dove, THIN-FILM MATERIALS FOR THE PREPARATION OF ATTENUATING PHASE-SHIFT MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 32-36
There is considerable interest in the use of phase shift masks as a ro
ute to.extend the resolution, contrast, and depth-of-focus of lithogra
phic tools beyond what is achievable with the normal chrome mask techn
ology. In the attenuating phase shift mask, the chrome layer is replac
ed with a slightly transparent layer and the mask is etched so that li
ght through the layer is 180-degrees out of phase with light through c
lear regions. Thus, optical interference occurs which has the effect o
f increasing contrast at edges and of improving depth-of-focus. In thi
s article, experiments of thin film materials designed to provide both
the desired 180-degrees phase shift and optical absorption in a singl
e layer are described.