THIN-FILM MATERIALS FOR THE PREPARATION OF ATTENUATING PHASE-SHIFT MASKS

Authors
Citation
Kk. Shih et Db. Dove, THIN-FILM MATERIALS FOR THE PREPARATION OF ATTENUATING PHASE-SHIFT MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 32-36
Citations number
11
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
12
Issue
1
Year of publication
1994
Pages
32 - 36
Database
ISI
SICI code
1071-1023(1994)12:1<32:TMFTPO>2.0.ZU;2-1
Abstract
There is considerable interest in the use of phase shift masks as a ro ute to.extend the resolution, contrast, and depth-of-focus of lithogra phic tools beyond what is achievable with the normal chrome mask techn ology. In the attenuating phase shift mask, the chrome layer is replac ed with a slightly transparent layer and the mask is etched so that li ght through the layer is 180-degrees out of phase with light through c lear regions. Thus, optical interference occurs which has the effect o f increasing contrast at edges and of improving depth-of-focus. In thi s article, experiments of thin film materials designed to provide both the desired 180-degrees phase shift and optical absorption in a singl e layer are described.