POLYCRYSTALLINE SILICON SLIT NANOWIRE FOR POSSIBLE QUANTUM DEVICES

Polycrystalline silicon (poly-Si) ''slit nanowire'' was fabricated in a slit formed with 100 nm lithography, microwave dry etching of silico n substrate, conformable filling of the trench by chemical vapor depos ition (CVD) SiO2, slit etching of the CVD SiO2, conformable deposition of doped amorphous silicon, followed by etchback and annealing. Obser vation with transmission electron microscope confirmed that a poly-Si slit nanowire, with a cross section of approximately 5-8 nm x 20 nm is fabricated. Appropriate annealing of the a-Si layer makes the poly-Si grains grow to more than 2 mum in length. This technique would make i t possible to realize silicon quantum devices, and to fabricate conven tional integrated circuit devices and light emitting slit nanowire dev ices on a same silicon chip, which would allow the fabrication of inte grated optoelectronic circuits.