Y. Wada et al., POLYCRYSTALLINE SILICON SLIT NANOWIRE FOR POSSIBLE QUANTUM DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 48-53
Polycrystalline silicon (poly-Si) ''slit nanowire'' was fabricated in
a slit formed with 100 nm lithography, microwave dry etching of silico
n substrate, conformable filling of the trench by chemical vapor depos
ition (CVD) SiO2, slit etching of the CVD SiO2, conformable deposition
of doped amorphous silicon, followed by etchback and annealing. Obser
vation with transmission electron microscope confirmed that a poly-Si
slit nanowire, with a cross section of approximately 5-8 nm x 20 nm is
fabricated. Appropriate annealing of the a-Si layer makes the poly-Si
grains grow to more than 2 mum in length. This technique would make i
t possible to realize silicon quantum devices, and to fabricate conven
tional integrated circuit devices and light emitting slit nanowire dev
ices on a same silicon chip, which would allow the fabrication of inte
grated optoelectronic circuits.