THE USE OF A SI-BASED RESIST SYSTEM AND TI ELECTRODE FOR THE FABRICATION OF SUB-10 NM METAL-INSULATOR-METAL TUNNEL-JUNCTIONS

Authors
WADA T HARAICHI S ISHII K HIROSHIMA H KOMURO M GORWADKAR SM
Citation
T. Wada et al., THE USE OF A SI-BASED RESIST SYSTEM AND TI ELECTRODE FOR THE FABRICATION OF SUB-10 NM METAL-INSULATOR-METAL TUNNEL-JUNCTIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1430-1434
Citations number
12
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
16
Issue
3
Year of publication
1998
Part
2
Pages
1430 - 1434
Database
ISI
SICI code
0734-2101(1998)16:3<1430:TUOASR>2.0.ZU;2-W
Abstract
We have developed a process which is applicable for the fabrication of single electron devices by utilizing a SiO2/c-Si bilayer electron bea m resist. The process parameters were optimized especially for the fab rication of metal-insulator-metal tunnel junctions of sub-10 nm sizes. A suspended mask suitable for double angle evaporation was successful ly fabricated. Employing the highly corrosion resistance material Ti a s an electrode metal and two-step removal process against excess Ti ov er inorganic resist, we fabricated a structure with sub-10 nm Ti/TiOx/ Ti double tunnel junctions and an island, which exhibited tunneling pr operty. (C) 1998 American Vacuum Society.