Lh. Chang et al., STUDY OF PLATINUM-ELECTRODE PATTERNING IN A REACTIVE ION ETCHER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1489-1496
Citations number
22
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
This article addresses the problem of Pt electrode etching through the
use of a batch load production reactive ion etch (RIE) tool to study
etching characteristics and the cleanliness of patterned films with pr
essure, total gas flow, and percent of Cl-2 in Ar as variables, and co
nsiders some of the environmental, health, and safety issues. The resu
lts show that Pt etching is primarily a sputter etch process in which
the Cl-2 percentage has little impact on the Pt removal rate, but does
significantly affect etch uniformity across the wafer and the surface
cleanliness as analyzed with Auger electron spectroscopy. The maximum
Pt etch rate achieved was about 5 nm/min with good etch uniformity an
d surface cleanliness. X-ray photoelectron spectroscopy of the etch by
-products shows the presence of PtCl2 and PtCl4 when the Ar-Cl-2 etch
chemistry was used. These results provide useful information to addres
s material redeposition, wafer cleaning, and etch chamber cleaning saf
ety issues, major concerns in the RIE of Pt. (C) 1998 American Vacuum
Society.