HIGH-RATE ETCHING OF GAAS USING CHLORINE ATMOSPHERES DOPED WITH A LEWIS-ACID

Authors
FRANZ G
Citation
G. Franz, HIGH-RATE ETCHING OF GAAS USING CHLORINE ATMOSPHERES DOPED WITH A LEWIS-ACID, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1542-1546
Citations number
16
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
16
Issue
3
Year of publication
1998
Part
2
Pages
1542 - 1546
Database
ISI
SICI code
0734-2101(1998)16:3<1542:HEOGUC>2.0.ZU;2-0
Abstract
The etching behavior of GaAs versus BCl3/Cl-2 is analyzed in a capacit ively coupled plasma and a plasma excited by electron cyclotron resona nce using optical emission spectroscopy (OES). For both types of disch arges, the etch rate of the semiconductor can be parametrized by using the OES signal which is corrected by actinometry. Exhibiting open sur faces between 10 and 17 cm(2) high-rate etching in both types of disch arges is combined with very steep sidewalls and excellent radial unifo rmity. (C) 1998 American Vacuum Society.