ANALYTIC REPRESENTATIONS OF THE DIELECTRIC FUNCTIONS OF CRYSTALLINE AND AMORPHOUS SI AND CRYSTALLINE GE FOR VERY LARGE-SCALE INTEGRATED DEVICE AND STRUCTURAL MODELING

Various representations of the dielectric functions of semiconducting materials have been proposed. We compare five different models for rep resenting the dielectric functions of crystalline (c-) Si, amorphous ( a-) Si, and c-Ge from 1.5 to 6.0 eV. The four-oscillator critical poin t with parity plus one-dimensional tight-binding model (CPP-1D) best r epresents c-Si. Different models best represent a-Si and c-Ge. These r epresentations provided a basis for modeling variations encountered in semiconductor manufacturing. (C) 1998 American Vacuum Society.