Cg. Vandewalle, HYDROGEN IN SILICON - FUNDAMENTAL PROPERTIES AND CONSEQUENCES FOR DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1767-1771
Citations number
30
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The interactions between hydrogen and silicon are investigated based o
n first-principles calculations. After a comprehensive overview of var
ious configurations attention is focused on the energetics and dissoci
ation of Si-H bonds. An examination of the dissociation mechanism of S
i-H bonds suggests an explanation for the observed difference in stabi
lity between hydrogen and deuterium at dangling bonds. Connections bet
ween the phenomena at surfaces, interfaces; and in amorphous materials
will be pointed out. (C) 1998 American Vacuum Society.