HYDROGEN IN SILICON - FUNDAMENTAL PROPERTIES AND CONSEQUENCES FOR DEVICES

Authors
Citation
Cg. Vandewalle, HYDROGEN IN SILICON - FUNDAMENTAL PROPERTIES AND CONSEQUENCES FOR DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1767-1771
Citations number
30
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
16
Issue
3
Year of publication
1998
Part
2
Pages
1767 - 1771
Database
ISI
SICI code
0734-2101(1998)16:3<1767:HIS-FP>2.0.ZU;2-Z
Abstract
The interactions between hydrogen and silicon are investigated based o n first-principles calculations. After a comprehensive overview of var ious configurations attention is focused on the energetics and dissoci ation of Si-H bonds. An examination of the dissociation mechanism of S i-H bonds suggests an explanation for the observed difference in stabi lity between hydrogen and deuterium at dangling bonds. Connections bet ween the phenomena at surfaces, interfaces; and in amorphous materials will be pointed out. (C) 1998 American Vacuum Society.