EFFECTS OF SURFACE PHOSPHORUS ON THE KINETICS OF HYDROGEN DESORPTION FROM SILANE-ADSORBED SI(100) SURFACE AT ROOM TEMPERATURES

Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH4/Si (100) surface has been investigated by H-2-temperature-pr ogrammed-desorption (TPD) measurements. The beta(1)-TPD peak shifted t oward higher temperatures by about 10 degrees C when phosphorus was pr edeposited to theta(p) = 0.25 ML, and the shift increased with decreas ing SiH4 exposure. Two analyses, the Arrhenius plot and the order plot , have been applied to the TPD spectra, clarifying that the 0.25 ML ph osphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0+/-0.2 to 2.5+/-0.1 e V and the reaction order from 1.0+/-0.2 to 2.0+/-0.2. (C) 1998 America n Vacuum Society.