Vs. Smentkowski et al., USE OF REACTIVE ION SPUTTERING TO PRODUCE CLEAN GERMANIUM SURFACES INA CARBON-RICH ENVIRONMENT - AN ION-SCATTERING STUDY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1779-1784
Citations number
38
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
We have used the ion spectroscopic techniques of direct recoil spectro
scopy and mass spectroscopy of recoiled ions to demonstrate that low e
nergy reactive ion sputtering of Ge is capable of removing surface imp
urities such as carbon. The experiments were performed in a vacuum cha
mber maintained at 3.5X10(-7) Torr. At these pressures, physical sputt
ering using noble gas is not effective for cleaning Ge surfaces as car
bon redeposits onto the surface. In this article, we demonstrate that
reactive sputtering of Ge using 4.0 keV nitrogen at a Ge surface tempe
rature of similar to 740 K and above removes surface carbon and deposi
ts nitrogen on the Ge surface. Heating the nitrogen exposed Ge surface
to above similar to 880 K results in the desorption of nitrogen and g
enerates an atomically clean Ge surface, under poor vacuum conditions.
(C) 1998 American Vacuum Society.