COMPARISON OF THE SUBMICRON PARTICLE ANALYSIS CAPABILITIES OF AUGER-ELECTRON SPECTROSCOPY, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY, AND SCANNING ELECTRON-MICROSCOPY WITH ENERGY-DISPERSIVE X-RAY SPECTROSCOPY FOR PARTICLES DEPOSITED ON SILICON-WAFERS WITH 1 MU-M THICK OXIDELAYERS

Future particle analysis methods must be capable of determining the co mposition of 100 nm and smaller particles. Determination of the oxidat ion state is a part of this capability. In this study, we compare Auge r; scanning electron microscopy equipped with energy dispersive x-ray spectroscopy, and time-of-flight secondary ion mass spectrometry using a sized set of Al, Al2O3, and TiO2 deposited on silicon wafers having 1 mu m of thermally grown oxide. (C) 1998 American Vacuum Society.