SILICON FIELD EMITTER CATHODES - FABRICATION, PERFORMANCE, AND APPLICATIONS

This article gives an overview of fabrication and performance of a cla ss of vacuum microelectronic devices, namely, silicon tip-on-post fiel d emitter arrays (FEAs). Experimental data illustrating the device per formance are presented in the context of requirements for field emissi on flat panel display and microwave power amplifier applications. Crit ical geometrical parameters of the device are discussed, and a fabrica tion process flow designed to optimize these parameters is described. Equipment and methods for testing electrical performance of the FEAs a nd results thus generated are presented. Specifically, emission curren t versus gate voltage characteristics for arrays with tips formed usin g anisotropic (crystallographic-orientation-dependent) or isotropic et ching techniques, uniformity of these characteristics across a 4 in. d iameter substrate, stability of emission current in ultrahigh vacuum c onditions, and changes in emission current upon exposure to active gas es at varying pressure are discussed. (C) 1998 American Vacuum Society .