SPUTTER-INITIATED RESONANCE IONIZATION SPECTROSCOPY - AN ANALYTICAL TECHNIQUE FOR QUANTITATIVE AND SENSITIVE MEASUREMENTS OF IMPURITIES ANDULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS

Sputter-initiated resonance ionization spectroscopy (SIRIS) is an emer ging analytical technique for quantitative and sensitive measurements of impurities and ultra-shallow doping profiles in semiconductors. SIR IS has almost all of the advantages of secondary ion mass spectroscopy (SIMS), while making significant improvements in the following SIMS s hortcomings: efficiency, matrix dependence, isobaric and molecular int erferences, sensitivity, dynamic range, and quantitation accuracy. In this article, the SIRIS technique is described and shows typical SIRIS depth profiles of boron implanted into silicon with dynamic ranges gr eater than approximately 2 x 10(6) as well as SIRIS aluminum depth pro files of layered GaAs/AlGaAs/GaAs samples with depth resolution of up to approximately 2 nm at 0.5 keV Ar+ primary ion energy. SIRIS's dynam ic range, sensitivity, depth resolution and its limitations, and quant itation accuracy will be discussed in detail.