T. Clarysse et W. Vandervorst, AUTOMATIC-GENERATION OF SHALLOW ELECTRICALLY ACTIVE DOPANT PROFILES FROM SPREADING RESISTANCE MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 290-297
The calculation of the electrically active dopant profile from spreadi
ng resistance measurements requires not only the calculation of the sa
mpling volume correction factor but also a deconvolution of the carrie
r spilling effects. A completely automatic Poisson-based correction pa
ckage has been developed which performs this calculation-deconvolution
within 1 min on a 486-based microcomputer and supports all the curren
tly known contact models. The capabilities of the package will be demo
nstrated on an ultra-shallow opposite type implant, a narrow-base tran
sistor and a submicron source-drain implant. Furthermore, a series of
requirements is being proposed for the accurate correction of carrier
spilling effects. The currently available Poisson contact models will
be reviewed with respect to these requirements starting from secondary
ion mass spectrometry measurements and an improved contact model invo
lving the parallel circuit of an elastically deformed stress layer and
a plastically deformed metallic phase layer will be proposed.