AUTOMATIC-GENERATION OF SHALLOW ELECTRICALLY ACTIVE DOPANT PROFILES FROM SPREADING RESISTANCE MEASUREMENTS

The calculation of the electrically active dopant profile from spreadi ng resistance measurements requires not only the calculation of the sa mpling volume correction factor but also a deconvolution of the carrie r spilling effects. A completely automatic Poisson-based correction pa ckage has been developed which performs this calculation-deconvolution within 1 min on a 486-based microcomputer and supports all the curren tly known contact models. The capabilities of the package will be demo nstrated on an ultra-shallow opposite type implant, a narrow-base tran sistor and a submicron source-drain implant. Furthermore, a series of requirements is being proposed for the accurate correction of carrier spilling effects. The currently available Poisson contact models will be reviewed with respect to these requirements starting from secondary ion mass spectrometry measurements and an improved contact model invo lving the parallel circuit of an elastically deformed stress layer and a plastically deformed metallic phase layer will be proposed.