FROM INP GAINASP INTERFACE STUDY TO NANOMETER RANGE HETEROSTRUCTURE DETECTION WITH PROBE METHOD/

Results of InP/GaInAsP interface study using the contact probe profili ng method are presented. Results of the interface study are given for lambda = 1.3 mum laser heterostructures. A correlation is shown betwee n the shape of the interface in the heterostructure and the threshold current of lasers produced from such heterostructures. The correlation of the results with secondary ion mass spectroscopy measurements is a lso demonstrated. An idea is given of how to detect the very close spa ced interfaces with the contact probe method. Its realization with the use of Kr+ ion bombardment is shown. In conclusion the ballistic elec tron emission microscopy is suggested as an attractive new method for characterization of shallow heterostructures.