A. Sultan et al., BOLTZMANN-MATANO ANALYSIS BASED MODEL FOR BORON-DIFFUSION FROM POLYSILICON INTO SINGLE-CRYSTAL SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 391-394
The diffusion of boron in single crystal silicon has been modeled foll
owing a BF2 or boron implant in a polysilicon layer deposited on a sin
gle crystal silicon substrate. The effective concentration-dependent d
iffusivities of boron in single crystal have been extracted using Bolt
zmann-Matano analysis from the experimental boron diffusion profiles m
easured using secondary ion mass spectrometry. The effective boron dif
fusivities are found to be independent of the implant dose. A new anal
ytical model for concentration-dependent boron diffusivities has been
implemented in the PEPPER simulation program to accurately model the b
oron diffusion profiles in single crystal silicon for a polysilicon-on
-single-crystal-silicon structure. The model has been verified for a w
ide range of furnace anneal conditions (800-950-degrees-C, from 30 min
to 6 h), and implant conditions (BF2 doses varied from 5 x 10(15) to
2 x 10(16) cm-2 at 70 keV and boron dose of 5 x 10(15) cm-2 at 20 keV)
.