MEASUREMENT OF THE SHEET RESISTANCE OF DOPED LAYERS IN SEMICONDUCTORSBY MICROWAVE REFLECTION

Authors
BHIMNATHWALA H BORREGO JM
Citation
H. Bhimnathwala et Jm. Borrego, MEASUREMENT OF THE SHEET RESISTANCE OF DOPED LAYERS IN SEMICONDUCTORSBY MICROWAVE REFLECTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 395-398
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
1
Year of publication
1994
Pages
395 - 398
Database
ISI
SICI code
1071-1023(1994)12:1<395:MOTSRO>2.0.ZU;2-G
Abstract
This article presents results obtained using microwave reflection betw een 26.5 and 36.5 GHz for measuring the sheet resistance of doped laye rs in semiconductors. The advantage of the technique is that it is non destructive and has a dynamic range and spatial resolution similar to what it can be obtained with four point resistivity probes. Using this technique, we have been able to measure the sheet resistance of shall ow implanted layers on silicon wafers implanted with doses in the rang e of 10(16)-10(12) ions/cm2. The sheet resistance measured was between 30 and 80 000 OMEGA/square.