2-DIMENSIONAL MODELING OF HIGH PLASMA-DENSITY INDUCTIVELY-COUPLED SOURCES FOR MATERIALS PROCESSING

Inductively coupled plasma sources are being developed to address the need for high plasma density (10(11)-10(12) cm-3), low pressure (a few to 10-20 mTorr) etching of semiconductor materials. One such device u ses a flat spiral coil of rectangular cross section to generate radio- frequency (rf) electric fields in a cylindrical plasma chamber, and ca pacitive rf biasing on the substrate to independently control ion ener gies incident on the wafer. To investigate these devices we have devel oped a two-dimensional hybrid model consisting of electromagnetic, ele ctron Monte Carlo, and hydrodynamic modules; and an off line plasma ch emistry Monte Carlo simulation. The results from the model for plasma densities, plasma potentials, and ion fluxes for Ar, O2, Ar/CF4/O2 gas mixtures will be presented.