MODELING THE DC CHARACTERISTICS OF MERGED BIPOLAR-MOS STRUCTURES

Authors
LIANG S SALAMA CAT MALIEPAARD M
Citation
S. Liang et al., MODELING THE DC CHARACTERISTICS OF MERGED BIPOLAR-MOS STRUCTURES, Solid-state electronics, 37(3), 1994, pp. 387-392
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
3
Year of publication
1994
Pages
387 - 392
Database
ISI
SICI code
0038-1101(1994)37:3<387:MTDCOM>2.0.ZU;2-G
Abstract
An analytical d.c. model for quick estimation of the electrical perfor mance of merged bipolar-MOS structures used in BiCMOS applications is presented in this paper. This model leads to an intuitive understandin g of the merged structure's behavior. 0.8 mu m BiCMOS experimental str uctures were used to verify the validity and accuracy of the model.