A COMPACT HBT DEVICE MODEL-BASED ON A ONE-FLUX TREATMENT OF CARRIER TRANSPORT

A new approach to modeling the current vs voltage characteristics of h eterojunction bipolar transistors (HBTs) is introduced. Using McKelvey 's Aux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formu late the new model for general, double heterojunction bipolar transist ors and show that the results reduce to those obtained by the conventi onal current balancing approach only under specific, simplifying condi tions. We also extend the model to treat quasi-ballistic transport in short base HBTs.