A SIMPLE-MODEL FOR QUANTIZATION EFFECTS IN HEAVILY-DOPED SILICON MOSFETS AT INVERSION CONDITIONS

The transistor parameters of state-of-the-art MOSFETs are affected by quantisation effects of the carrier motion in the inversion channel. T o account for these effects in classical device stimulators, we show t hat a better modeling of the silicon bandgap at inversion conditions i s E(g)(QM) = E(g)(CONV) + 13/9 Delta epsilon in which Delta epsilon is the position of the first energy level with respect to the bottom of the conduction band. The improved modeling of the bandgap leads to a n ew model for the intrinsic carrier concentration n(i). The model for n (i) has been tested against measurements and against self-consistent Q M calculations. Excellent agreement is obtained.