A COMPARATIVE-STUDY ON THE NOISE MEASURE OF MILLIMETER-WAVE GAAS IMPATT DIODES

Authors
HARTH W BOGNER W GAUL L CLAASSEN M
Citation
W. Harth et al., A COMPARATIVE-STUDY ON THE NOISE MEASURE OF MILLIMETER-WAVE GAAS IMPATT DIODES, Solid-state electronics, 37(3), 1994, pp. 427-431
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
3
Year of publication
1994
Pages
427 - 431
Database
ISI
SICI code
0038-1101(1994)37:3<427:ACOTNM>2.0.ZU;2-Z
Abstract
It is theoretically and experimentally demonstrated that the small-sig nal noise measure of GaAs single-drift Impatt-diodes can efficiently b e reduced by increasing the total width of the diode space-charge regi on due to shot-noise reduction and space-charge smoothing. For a total space-charge region width of 770 nm, a minimum noise-measure of 22 dB at 60 GHz is obtained. This value reaches almost the theoretical opti mum noise measure of pin-avalanche diodes.