A FULLY ANALYTICAL BACK-GATE BIAS MODEL FOR N-CHANNEL SILICON MESFETSWITH BACK CHANNEL IMPLANT

Authors
SIM JH TANG MC KUO JB
Citation
Jh. Sim et al., A FULLY ANALYTICAL BACK-GATE BIAS MODEL FOR N-CHANNEL SILICON MESFETSWITH BACK CHANNEL IMPLANT, Solid-state electronics, 37(3), 1994, pp. 459-462
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
3
Year of publication
1994
Pages
459 - 462
Database
ISI
SICI code
0038-1101(1994)37:3<459:AFABBM>2.0.ZU;2-L
Abstract
In this paper, a fully analytical back-gate bias effect model for n-ch annel silicon MESFET devices is presented. As verified by the PISCES r esults, the analytical n-channel silicon MESFET back-gate bias effect model provides a good accuracy in the internal potential distribution and the threshold voltage as the back gate bias is changed.